description RT3N22M is a compound transistor built with two rt1n241 in sc-88 package. feature silicon epitaxial type each transistor elemen ts are independent. mini package for easy mounting application inverted circuit, switching circuit, interface circuit, driver circuit RT3N22M compound transistor with resistor for switching application silicon epitaxial type outline drawing unit mm maximum rating (ta=25 ? ) symbol parameter rating unit v cbo collector to base voltage 50 v v ebo emitter to base voltage 10 v v ceo collector to emitter voltage 50 v i c collector current 100 ma i cm peak collector current 200 ma p c collector dissipation total, ta=25 ? 150 mw t j junction temperature 150 ? t stg storage temperature -55 ? 150 ? marking /
2 3 6 5 4 . is ahaya ele c tr on i cs co rp o rati on terminal connector ? emitter1 ? base1 ? collector2 ? emitter2 ? base2 ? :collector1 jeita sc-88 0 ? 0.1 0.65 0.9 1.25 2.1 0.65 0.65 2.0 0.2 0.13 ? ? ? ? ? ? r1 r2 rtr1 ? ? ? ? r2 rtr2 ? r1 ?
RT3N22M compound transistor with resistor for switching application silicon epitaxial type electrical characteristics (ta=25 ? ) limits symbol parameter test conditions min typ max unit v (br)ceo collector to emitter break down voltage i c =100 a,r be = ? 50 - - v i cbo collector cut off current v cb =50v,i e =0 - - 0.1 a h fe dc forward current gain v ce =5v,i c =5ma 50 - - - v ce(sat) collector to emitter saturation voltage i c =10ma,i b =0.5ma - 0.1 0.3 v v i(on) input on voltage v ce =0.2v,i c =5ma - 1.8 3.0 v v i(off) input off voltage v ce =5v,i c =100 a 0.8 1.1 - v r 1 input resistor - 16 22 28 k r 2 /r 1 resistor ratio - 0.9 1.0 1.1 - f t gain band width product v ce =6v,i e =-10ma - 200 - mh z 5 : 1 * $ " - $ ) " 3 " $ 5 & |